 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| EID1616-3 UPDATED: 07/24/2008 16.2-16.5 GHz 3-Watt Internally-Matched Power FET FEATURES * 16.2-16.5 GHz Bandwidth * Input/Output Impedance Matched to 50 Ohms * +35.0 dBm Output Power at 1dB Compression * 6.0 dB Power Gain at 1dB Compression * 25% Power Added Efficiency * Hermetic Metal Flange Package * 100% Tested for DC, RF, and RTH .060 MIN. Excelics EID1616-3 .060 MIN. .650.008 .512 GATE DRAIN .319 YYWW SN .094 .382 .022 .045 .004 .070 .008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 16.2-16.5GHz VDS = 10 V, IDSQ 1200mA Gain at 1dB Compression f = 16.2-16.5GHz VDS = 10 V, IDSQ 1200mA Gain Flatness f = 16.2-16.5GHz VDS = 10 V, IDSQ 1200mA Power Added Efficiency at 1dB Compression f = 16.2-16.5GHz VDS = 10 V, IDSQ 1200mA Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 2 Caution! ESD sensitive device. MIN 34.5 5.0 TYP 35.0 6.0 0.6 25 700 1100 -2.5 8.5 900 1500 -4.0 10.5 o MAX UNITS dBm dB dB % mA mA V C/W P1dB G1dB G PAE Id1dB IDSS VP RTH f = 16.2-16.5GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 mA Notes: 1. Tested with 100 Ohm gate resistor. 2. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature VALUE 10 V -4.5 V IDSS 20 mA @ 3dB compression 11.5 W 150C -65/+150C Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised July 2008 EID1616-3 UPDATED: 07/24/2008 16.2-16.5 GHz 3-Watt Internally-Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised July 2008 |
Price & Availability of EID1616-3
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |